In situ spectroscopic ellipsometry studies of hydrogen ion bombardment of crystalline siliconHU, Y. Z; LI, M; CONRAD, K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1111-1117, issn 0734-211XArticle

Interaction of titanium with single crystal silicon during rapid electron beam heatingMAHMOOD, F; AHMED, H; SULEMAN, M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1181-1186, issn 0734-211XArticle

Investigation by scanning tunneling microscopy of the effect of preparative variables on the degree of aggregation of platinum on highly oriented pyrolytic graphiteLEE, S; PERMANA, H; NG, K. Y. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 561-565, issn 0734-211XArticle

Parametric evaluation of electron cyclotron resonance deposited SiO₂ using a multicusp plasma applicatorBUCKLE, K. A; PASTOR, K; CONSTANTINE, C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1133-1138, issn 0734-211XArticle

Properties of silicon dioxides films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicateRAY, S. K; MAITI, C. K; LAHIRI, S. K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1139-1150, issn 0734-211XArticle

Quantitative description of dissolution and dissolution inhibition in novolak and other phenolic resinsTUNG-FENG YEH; HSIAO-YIH SHIH; REISER, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 715-722, issn 0734-211XArticle

Silicidation using electron cyclotron resonance plasmaNAGASE, M; ISHII, H; MACHIDA, K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1087-1090, issn 0734-211XArticle

Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusionSINGH, V. K; SHAQFEH, E. S. G; MCVITTIE, J. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1091-1104, issn 0734-211XArticle

Atomic force microscope and Auger electron microscopy studies of thin film ultrasmooth Au-Cr films on micaCARMI, Y; DAHM, A. J; EPPEL, S. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2302-2306, issn 0734-211XArticle

Diffraction effects in x-ray proximity printingDUBNER, A. D; WAGNER, A; LEVIN, J. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2234-2242, issn 0734-211XArticle

Electrical characterization of low temperature GaAs layers, and observation of the extremely large carrier concentrations in undoped materialTADAYON, B; FATEMI, M; TADAYON, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1074-1077, issn 0734-211XArticle

Oxidation of silicon in an oxygen plasma generated by a multipolar electron cyclotron resonance sourceSUNG, K. T; PANG, S. W.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2211-2216, issn 0734-211XArticle

Oxygen magnetically enhanced reactive etching of silylated resist patternsDIJKSTRA, H. J.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2222-2229, issn 0734-211XArticle

Properties of very low temperature plasma deposited silicon nitride filmsJUANG, C; CHANG, J. H; HWANG, R. Y et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1221-1223, issn 0734-211XArticle

Recent developments in ohmic contacts for III-V compound semiconductorsSHEN, T. C; GAO, G. B; MORKOC, H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2113-2132, issn 0734-211XArticle

A poisson solver for spreading resistance analysisDICKEY, D. H.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 438-441, issn 0734-211XConference Paper

A study of GaAsSb/InAIAs interfaces grown by molecular-beam epitaxySTUTZ, C. E; EVANS, K. R; MARTINEZ, M. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 892-894, issn 0734-211XConference Paper

Applications of sawtooth doping superlattice for negative-differential-resistance devices fabricationWEN-CHAU; CHUNG-YIH SUN; WEN-SHIUNG LOUR et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 60-66, issn 0734-211XConference Paper

Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxyMAHALINGAM, K; OTSUKA, N; MELLOCH, M. R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 812-814, issn 0734-211XConference Paper

Can nuclear magnetic resonance resolve epitaxial layers ?BURATTO, S. K; SHYKIND, D. N; WEITEKAMP, D. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1740-1743, issn 0734-211XConference Paper

Carrier diffusion effects in III-V semiconductor structures measured by the point contact current voltage techniqueELDRIDGE, G. W; BERKOWITZ, H. L; HILLARD, R. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 463-467, issn 0734-211XConference Paper

Comparison of the geometric structure and electron reflectivity of A/B-NiSi₂/Si(111) nd U/F-Si(111)-7×7 interfacesKUBBY, J. A; GREENE, W. J.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1908-1913, issn 0734-211XConference Paper

Continuous wave laser induced chemical reactions with integraded circuits : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USAAUVERT, G.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 248-255, issn 0734-211XConference Paper

Current status of direct growth of CdTe and HgCdTe on silicon by molecular-beam epitaxySPORKEN, R; CHEN, Y. P; SIVANANTHAN, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1405-1409, issn 0734-211XConference Paper

Diethylsilane on silicon surfaces : adsorption and decomposition kinetics : Fourth topical conference on microphysics of surfaces : beam-induced processes, 11-13 Febrary 1991, Santa Fe, New Mexico, USACOON, P. A; WISE, M. L; DILLON, A. C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 221-227, issn 0734-211XConference Paper